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Физика и техника полупроводников
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Год 2007, выпуск 4
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Физика и техника полупроводников, 2007, том 41, выпуск 4
The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors June 11-14, 2006
Wan D., Pouget V., Douin A., Jaulent P., Lewis D., Fouillat P.
In-depth resolution for LBIC technique by two-photon absorption
387
Kalinina E.V., Skuratov V.A., Sitnikova A.A., Kolesnikova E.V., Tregubova , Scheglov M.P.
Structural peculiarities of 4H-SiC irradiated by Bi ions
392
Salh Roushdey, Fitting L., Kolesnikova E.V., Sitnikova A.A., Zamoryanskaya M.V., Schmidt B., Fitting H.-J.
Si and Ge nanocluster formation in Silica matrix
397
Kolesnikova E., Mynbaeva M., Sitnikova A.
Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates
403
Jia G., Arguirov T., Kittler M., Su Z., Yang D., Sha J.
Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO
407
Sellin P.J., Davies A.W., Boroumand F., Lohstroh A., Ozsan M.E., Parkin J., Veale M.
IBIC characterization of charge transport in CdTe : Cl
411
Yakimov E.B., Zhang R.H., Rozgonyi G.A., Seacrist M.
EBIC characterization of strained Si/SiGe heterostructures
417
Krapukhin V.V., Vergeles P.S., Yakimov E.B.
Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe
422
Yakimov E.B., Borisov S.S., Zaitsev S.I.
EBIC measurements of small diffusion length in semiconductor structures
426
Kaminski P., Koz owski R., Kozubal M., Zelazko J., Miczuga M., Paw owski M.
Photoinduced transient spectroscopy of defect centers in GaN and SiC
429
Cavalcoli D., Cavallini A., Rossi M., Pizzini S.
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods
435
Burakov B.E., Garbuzov V.M., Kitsay A.A., Zirlin V.A., Petrova M.A., Domracheva Ya.V., Zamoryanskaya M.V., Kolesnikova E.V., Yagovkina M.A., Orlova M.P.
The use of cathodoluminescence for development of durable self-glowing crystals based on solid solutions YPO
4
--EuPO
4
441
Chaika A.N., Bozhko S.I., Ionov A.M., Myagkov A.N., Abrosimov N.V.
STM and LEED studies of the atomically ordered terraced Si(557) surfaces
445
Arguirov T., Seifert W., Jia G., Kittler M.
Photoluminescence study on defects in multicrystalline silicon
450
Breitenstein O., Bauer J., Rakotoniaina J.P.
Material-induced shunts in multicrystalline silicon solar cells
454
Burylova I.V., Petrov V.I., Snopova M.G., Stepovich M.A.
Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam
1
458
Kosolobov S.S., Song Se Ahn, Rodyakina E.E., Latyshev A.V.
Initial stages of gold adsorption on silicon stepped surface at elevated temperatures
462
Fitting H.-J., Salh Roushdey, Schmidt B.
Multimodal luminescence spectra of ion-implanted silica
467
Yu X., Vyvenko O., Kittler M., Seifert W., Mtchedlidze T., Arguirov T., Reiche M.
Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
471
Zamoryanskaya M.V., Sokolov V.I.
Cathodoluminescence study of silicon oxide/silicon interface
475
Alexandrov S.E., Speshilova A.B., Soloviev Y.V., Eremeychik O.I.
AFM investigation of thin post-baked photoresistive films for microsystem technology application
481
Khrustalev V.S., Bobyl A.V., Konnikov S.G., Maleev N.A., Zamoryanskaya M.V.
Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging
484
Ivanov A.S., Vasilev V.I., Sedova I.V., Sorokin S.V., Sitnikova A.A., Konnikov S.G., Popova T.B., Zamoryanskaya M.V.
Cathodoluminescence of laser A
II
B
VI
heterostructures
488
Sokolov R.V., Zamoryanskaya M.V., Kolesnikova E.V., Sokolov V.I.
Evolution of luminescence properties of natural oxide on silicon and porous silicon
492
Afrosimov V.V., Il'in R.N., Sakharov V.I., Serenkov I.T.
Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique
497
Shmidt N.M., Vergeles P.S., Yakimov E.B.
EBIC characterization of light emitting structures based on GaN
501
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Российская академия наук
Физико-технический институт им. А.Ф.Иоффе Российской академии наук
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Физико-технический институт им. А.Ф.Иоффе Российской академии наук
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