Вышедшие номера
Initial stages of gold adsorption on silicon stepped surface at elevated temperatures
Kosolobov S.S.1, Song Se Ahn2, Rodyakina E.E.1, Latyshev A.V.1
1Institute of Semiconductor Physics, Russian Academy of Sciences, Siberian Branch, Novosibirsk, Russia
2Samsung Advanced Institute of Technology, 440-600, POB 111 Suwon, Korea
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.

Experimental study performed by ultrahigh vacuum reflection electron microscopy and atomic force microscopy reveals step instability on Si (111) surface during gold deposition at elevated temperatures (higher than 900oC). Our results show that transformations of regular atomic steps into the system of step bunches and vice versa depend on the gold coverage and direction of the electrical current heating the sample. The mechanism and conditions of the surface morphology transformations are discussed. PACS: 61.72.Ji, 68.35.Fx, 68.37.-d