EBIC characterization of strained Si/SiGe heterostructures
Yakimov E.B.1, Zhang R.H.2, Rozgonyi G.A.2, Seacrist M.3
1Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Russia
2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, USA
3MEMC Electronic Materials, MO St. Peters, USA
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.
Strained-Si/SiGe heterostructure is studied by the EBIC. The effect of annealing at 800oC is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on Eb. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play a role of such defects. PACS: 68.37.Hk, 72.80.Cw
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