"Физика и техника полупроводников"
Вышедшие номера
EBIC characterization of light emitting structures based on GaN
Shmidt N.M.1, Vergeles P.S.2, Yakimov E.B.1
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
Поступила в редакцию: 16 октября 2006 г.
Выставление онлайн: 19 марта 2007 г.

The EBIC investigations of light emitting structures based on InGaN/GaN MQW with different number of wells have been carried out. The pronounced dependence of collection efficiency on quantum well number is observed. A comparison with apparent carrier profiles calculated from the C-V curves reveals the correlation between the collection efficiency and location of quantum well inside the depletion region. The defects producing bright EBIC contrast are revealed in the structure with 5 quantum wells. This contrast is associated with defects locally decreasing the excess carrier recombination inside quantum wells. PACS: 63.37.HK, 72.80.Ey, 73.21.Fg
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