EBIC measurements of small diffusion length in semiconductor structures
Yakimov E.B.1, Borisov S.S.1, Zaitsev S.I.1
1Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.
The problems arising under submicron diffusion length measurements by the EBIC are discussed. As an example the results of diffusion length measurements in GaN are presented. It is shown that fitting the collection efficiency dependence on beam energy is the most reliable method for this purpose. The depth-dose dependence for GaN is calculated by the Monte-Carlo method and its analytical approximation is presented. This expression was verified experimentally by simultaneous fitting the collected current dependence on beam energy for a few applied bias values. PACS: 68.37.Hk, 72.80.Ey
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