Photoinduced transient spectroscopy of defect centers in GaN and SiC
Kaminski P.1, Koz owski R.1, Kozubal M.1, Zelazko J.1, Miczuga M.2, Paw owski M.2
1Institute of Electronic Materials Technology, 01-919 Warszawa, Poland
2Military University of Technology, 00-908 Warszawa, Poland
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.
The potentialities of photoinduced transient spectroscopy in terms of investigation of defect centers in wide band gap semiconductors are presented. The experimental system dedicated to measurements of the photocurrent transients at temperatures 20-800 K is described and a new approach to extraction of trap parameters from the photocurrent relaxation waveforms recorded in a selected temperature range is presented. The approach is based on the two-dimensional analysis of the waveforms as a function of time and temperature using the correlation procedure. As a result, the three-dimensional images showing the temperature changes of the emission rate for detected defect centers are produced and a neural network method is applied to determine the parameters of defect centers. The new approach is exemplified by studies of defect centers in high-resistivity GaN : Mg and semi-insulating 6H-SiC : V. PACS: 71.55.Eq, 71.55.Ht, 72.40.+w
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