"Физика и техника полупроводников"
Вышедшие номера
Micro- and nano-structures in silicon studied by DLTS and scanning probe methods
Cavalcoli D.1, Cavallini A.1, Rossi M.1, Pizzini S.2
1Physics Dept University of Bologna, Viale Berti Pichat 6/II, Bologna, Italy
2Material Science Dept University of Milan-Bicocca, Via Cozzi 53, Milano, Italy
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.

Presently there is a high interest in silicon-based optical devices that would render possible the development of fully silicon-based optoelectronics. Being an indirect gap semiconductor, silicon is poorly efficient as light emitter since radiative emission is limited by carrier recombination at non-radiative centers. One of the possible approaches to enhance the radiative emission from Si is the controlled introduction of micro- (dislocations) or nano- (nanocrystals) structures, which, providing quantum confinement of free carriers, prevent their diffusion towards non-radiative channels. Dislocations introduced in silicon by plastic deformation and Si nanocrystals embedded in amorphous silicon matrix have been investigated by junction spectroscopy and scanning probe microscopy methods. PACS: 61.72.-y, 71.55.Jv, 73.20.Hb, 73.50.Pz
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