"Физика и техника полупроводников"
Вышедшие номера
Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
Yu X.1,2, Vyvenko O.2,3, Kittler M.1,2, Seifert W.1,2, Mtchedlidze T.2, Arguirov T.1,2, Reiche M.4
1IHP, Frankfurt (Oder), Germany
2IHP/BTU Joint Lab, Cottbus, Germany
3St. Petersburg State University, St. Petersburg, Russia
4MPI fur Mikrostrukturphysik, Halle, Germany
Поступила в редакцию: 12 сентября 2006 г.
Выставление онлайн: 19 марта 2007 г.

Electrical levels of the dislocation network in Si and recombination processes via these levels were studied by means of the combination of grain-boundary deep level transient spectroscopy, grain-boundary electron beam induced current (GB-EBIC) and cathodoluminescence (CL). It was found two deep level traps and one shallow trap existed at the interface of bonded interface, which supply the recombination centers fo carriers. The total recombination probability based on GB-EBIC data increased with the excitation level monotonically, however, the radiative recombination based on D1-D2 CL data exhibited a maximum at a certain excitation level. By applying an external bias across the bonded interface, the CL signal of D-lines was enhanced dramatically. These results are consistent with our models about two channels of recombination via the trap levels. PACS: 68.37.Hk, 71.55.Cn, 78.60.Hk
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