Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Electrical characteristics of Au/n-GaAs structures with thin and thick SiO₂ dielectric layer

Altuntas H.¹, Corekci S.², Ozcelik S.³, Altindal S.³, Ozturk M.K.³

¹Department of Physics, Faculty of Sciences, Cankiri Karatekin University, Cankiri, Turkey
²Department of Physics, Faculty of Arts and Sciences, Kirklareli University, Ankara, Turkey
³Department of Physics, Faculty of Arts and Sciences, Gazi University, Ankara, Turkey

Поступила в редакцию: 1 февраля 2011 г.

Выставление онлайн: 19 сентября 2011 г.

PDF версия

Абстракт
Литература
Статистика просмотров

The aim of this study, to explain effects of the SiO₂ insulator layer thickness on the electrical properties of Au/n-GaAs Shottky barrier diodes (SBDs). Thin (60 Angstrem) and thick (250 Angstrem) SiO₂ insulator layers were deposited on n-type GaAs substrates using the plasma enhanced chemical vapour deposition technique. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics have been carried out at room temperature. The main electrical parameters, such as ideality factor (n), zero-bias barrier height (phi_Bo), series resistance (R_s), leakage current, and interface states (N_ss) for Au/SiO₂/n-GaAs SBDs have been investigated. Surface morphologies of the SiO₂ dielectric layer was analyzed using atomic force microscopy. The results show that SiO₂ insulator layer thickness very affects the main electrical parameters. Au/n-GaAs SBDs with thick SiO₂ insulator layer have low leakage current level, small ideality factor, and low interface states. Thus, Au/n-GaAs SBDs with thick SiO₂ insulator layer shows better diode characteristics than other.

R. Hackam, P. Harrop. IEEE Trans. Electron. Dev., 19, 1231 (1972)
S. Ashok, J.M. Borrego, R.J. Gutmann. Sol. St. Electron., 22, 621 (1972)
S. Altindal, I. Dokme, M.M. Bulbul, N. Yalcin, T. Serin. Microelectron. Eng., 83, 499 (2006)
A. Singh, K.C. Reinhhardt, W.A. Anderson. J. Appl. Phys., 68 (7), 3475 (1990)
P. Chattopadhyay, A.N. Daw. Sol. St. Electron., 29 555 (1986)
H.C. Card, E.H. Rhoderick. J. Phys. D: Appl. Phys., 4 1589 (1971)
K. Hatori, Y. Toru. Sol. St. Electron., 34, 531 (1991)
M. Biber. Physica B, 325, 138 (2003)
B. Akkal, Z. Benamara, L. Bideux, B. Gruzza. Microelectron. J., 30, 673 (1999)
P. Cova, A. Singh. Sol. St. Electron. 33, 11 (1990)
C.H. Liu, T.K. Lin, S.J. Chang. Sol. St. Electron., 49, 1077 (2005)
S.M. Sze. Physics of Semiconductor Devices, second edn (Wiley, N.Y., 1981)
A.K. Ghosh, T. Feng, J.I. Haberman, H.P. Maruska. J. Appl. Phys., 55, 2990 (1984)
A.K. Ghosh, C. Fishman, T. Feng, K.K. Ng, H.C. Card. J. Appl. Phys., 51, 2153 (1980)
I. Dokme. Physica B, 388, 10 (2007)
A. Singh, K.C. Reinhhardt, W.A. Anderson. J. Appl. Phys., 68 (7) 3475 (1990)
S. Altindal, S. Karadeniz, N. Tugluoglu, A. Tataroglu. Sol. St. Electron., 47 1847, (2003)
M.K. Hudait, S.B. Kruppanidhi. Sol. St. Electron., 44, 1089 (2000)
H. Cetin, E. Ayyildiz. Appl. Surf. Sci., 253, 596 (2007)
H. Altuntas, S. Altindal, S. Ozcelik, H. Shtrikman. Vaccum, 83, 1065 (2009)
H. Altuntas, S. Altindal, H. Shtrikman, S. Ozcelik. Microelectron, Reliab., 49, 904 (2009)
H. Wang, Y. Huang, Q. Sun, J. Chen, L.L. Wang, J.J. Zhu, D.G. Xhao, S.M. Zhang, D.S. Jiang, Y.T. Wang, H. Yang. Appl. Phys. Lett., 89, 092 114 (2006)
E.H. Rhoderick, R.H. Williams. Metal-Semiconductor Contacts, second edn (Clarendon Press, Oxford, 1988)
T.U. Kampen, S. Park, D.R.T. Zahn. Appl. Surf. Sci., 190, 461 (2002)
A. Bolognesi, A.Di. Carlo, P. Lugli, T. Kampen, D.R.T. Zahn. J. Phys.: Condens. Matter, 15, 2719 (2003)
S.K. Cheung, N.W. Cheung. Appl. Phys. Lett., 49, 85 (1986)
J.H. Werner, H.H. Guttler. J. Appl. Phys., 69, 1522 (1991)
J. Osvald, Z.J. Horvarth. Appl. Surf. Sci., 234, 349 (2004)
S. Karatas, S. Altindal. Mater. Sci. Eng. B, 122, 133 (2005)
E.H. Nicollian, A. Goetzberger. Appl. Phys. Lett., 7216 (1965)
E.H. Nicollian, J.R. Brews, MOS Physics and Technology (John Wiley and Sons, N. Y., 1982)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель