"Физика и техника полупроводников"
Вышедшие номера
Frequency Dependent Capacitance and Conductance--Voltage Characteristics of Nitride GaAs Schottky Diode
Полная версия: 10.1134/S1063782621010206
Ziane A. 1, Amrani M.2, Rabehi A.3, Douara A.3, Mostefaoui M. 4, Necaibia A. 1, Sahouane N. 1, Dabou R.1, Bouraiou A. 1
1Unite de Recherche en Energies Renouvelables en Milieu Saharien, URERMS, Centre de Developpement des Energies Renouvelables, CDER,, Adrar, Algeria
2Laboratoire de Micro-electronique Appliquee. Universite Djillali Liab`es de Sidi Bel Abbes, BP 89,, Sidi Bel Abbes, Algeria
3Institute of Science and Technology, Tissemsilt University Center, Tissemsilt, Algeria
4'Ecole nationale superieure d'informatique, Sidi Bel Abbes, Algeria
Email: abderrezzaq.ziane@gmail.com, rab_ehi@hotmail.fr
Поступила в редакцию: 28 июля 2020 г.
Выставление онлайн: 12 октября 2020 г.

A nitride GaAs Schottky diode have been fabricated by nitridation of GaAs substrates with thickness 0.7 nm of GaN layer. The capacitance-voltage C(V) and conductance-voltage G/omega versus V of the Au|GaN|GaAs structures were investigated at room temperature for different frequencies ranging between 1 KHz and 1 MHz. The measurements of C(V) and G/omega versus V of the Au|GaN|GaAs Schottky diode were found to be strongly dependent on bias voltage and frequency. The capacitance and conductance increased significantly with decreasing of the frequency, indicating the presence of continuous interface state density behavior. The series resistance Rs(V) plot gives a peak, decreasing with increasing frequencies and almost constant for high frequency. The device parameters such as doping concentration, interface capacitance, the barrier height, and series resistance were calculated using C(V) and G(V) characteristics, and were found to be 1.3·1016 cm-3, 3·10-7 F, 1.8 eV, and 47 Omega, respectively. The frequency dependency of the interface states density was calculated using Hill-Coleman's technique and it has been shown that the interface states density exponentially decreases with increasing frequency from 1016 eV-1cm-2 for 1 KHz to 1013 eV-1cm-2 for 1 MHz. Keywords: Schottky, GaAs, C(V), G(V), nitridation.

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Дата начала обработки статистических данных - 27 января 2016 г.