"Физика и техника полупроводников"
Вышедшие номера
Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique
Полная версия: 10.1134/S106378262101005X
El Hdiy A.1, Ledra M.2,3
1Equipe Thermique/Institut de Thermique, Mecanique, Materiaux (ITheMM), UFR SEN, Universite de Reims, Champagne-Ardenne, BP,, Reims cedex 2, France
2Centre Universitaire Abdelhafid BOUSSOUF-Mila, BP 26, RP, Mila, Algeria
3Laboratoire "LMSM", Universite de Biskra, BP. 145, R.P., Biskra, Algeria
Email: abdelillah.elhdiy@univ-reims.fr
Поступила в редакцию: 5 мая 2020 г.
Выставление онлайн: 12 октября 2020 г.

Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte-Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10 keV in a perpendicular configuration along a line passing through the contact center. The nanowire, considered as a recombination center, is vertically positioned beneath the contact. Calculation takes into account various parameters such as a nano-scale depletion zone under the nano-contact, the depth of the nanowire, and its size. The surface recombination velocity is taken equal to zero. Competition between both carriers collected by the nano-contact and those captured by the nanowire is studied. Both processes are affected by the depth of the nanowire and by the primary energy. Moreover, the nanowire-Si contact behaves as a nano-scale hetero-junction, and hole storage in the nanowire leads to accentuation of energy band bending, especially in the longitudinal direction of the nanowire. Consequently, tunnel recombination would be present. Keywords: nanowire, nano-EBIC, Monte-Carlo simulation, carrier trapping, carrier collection.

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