Crystal of zinc-doped In_0.6Se_0.4 was successfully grown by direct vapour transport (DVT) method. Grown In_0.6Se_0.4 : Zn crystal has been characterized by energy dispersive X-ray (EDAX) and powder X-ray diffractometer (XRD) techniques for compositional and micro-structural analysis, respectively. The EDAX spectra represent the grown In_0.6Se_0.4 : Zn crystal enriched with excess indium doped with Zn, which consecutively shows enhanced n-type conductivity. The powder XRD spectrum signified that the grown sample was crystalline and had hexagonal structure. The micro-structural parameters: average crystallite size, average lattice strain, dislocation density, and domain population were determined from powder XRD spectra. The thermoelectric properties such as Seebeck coefficient (S), electrical resistivity (sigma^-), and thermal conductivity (kappa) were measured in the temperature range of 313 to 368 K. Grown In_0.6Se_0.4 : Zn crystal reported Seebeck coefficient (S) as high as -548 μVK^-1 and figure of merit of 1.14 at 368 K. Keywords: DVT method, X-ray diffraction, micro-structural parameters, Seebeck coefficient, figure of merit.

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