"Физика и техника полупроводников"
Вышедшие номера
Single electron transistor: energy-level broadening effect and thermionic contribution
Nasri A.1, Boubaker A.1, Khaldi W.1, Hafsi B.2, Kalboussi A.1
1University of Monastir, Microelectronics and Instrumentation laboratory, Av de l'environnemen-Monastir-Tunisia
2CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR-IEMN, Univ Lille, Lille E-mail:
Email: abdelgafar@hotmail.fr
Выставление онлайн: 19 ноября 2017 г.

In this paper, a theoretical study of single electron transistor (SET) based on silicon quantum dot (Si-QD) has been studied. We have used a novel approach based on the orthodox theory. We studied the energy-level broadening effect on the performance of the SET, where the tunnel resistance depends on the discrete energy. We have investigated the I-V curves, taking into account the effects of the energy-level broadening, temperature and bias voltage. The presence of Coulomb blockade phenomena and its role to obtain the negative differential resistance (NDR) have been also outlined. DOI: 10.21883/FTP.2017.12.45191.8239
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