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Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts
Выставление онлайн: 19 ноября 2017 г.
The length of Source/Drain (S/D) extension (LSDE) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer LSDE pFinFET provides a larger series resistance and degrades the drive current (IDS), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter LSDE plus the shorter channel length demonstrates a higher trans-conductance (Gm) contributing to a higher drive current. Moreover, the subthreshold swing (S.S.) at longer channel length and longer LSDE represents a higher value indicating the higher amount of the interface states which possibly deteriorate the channel mobility causing the lower drive current. DOI: 10.21883/FTP.2017.12.45190.8421
- B.G. Streetman, S.K. Banerjee. Solid State Electronic Devices, 7th edn ( Prentice Hall Press, New Jersey, USA, 2015)
- S.Y. Wu, C.Y. Lin et al. IEEE/IEDM, 224 (2013)
- C.T. Malheiro, A.S.N. Pereira et al. IEEE/ ICCDCS, 1 (2012)
- W.S. Liao, Y.G. Liaw et al. IEEE/ Eelectron Dev. Lett., 29 (7), 788 (2008)
- S. Cristoloveanu. Sol. St. Electron., 45 (8), 1403 (2001)
- F. Heitzmanna, O. Debickia et al. Sol. St. Electron., 125, 14 (2016)
- S. Wei, G. Zhang et al. Jpn. J. Appl. Phys., 55, 104201 (2016)
- W.S. Hwang, B.J. Cho et al. J. Vac. Sci. Techn. B: Microelectronics and Nanometer Structures, 24 (6), 2689 (2006)
- W.S. Liao, M.C. Wang et al. Appl. Phys. Lett., 65 (17), 2229 (2011)
- C.L. Lin, P.H. Hsiao et al. IEEE Trans. Electron. Dev., 60 (11), 3639 (2013)
- Y.B. Liao, M.H. Chiang et al. IEEE Trans. Electron. Dev., 61 (4), 963 (2014)
- N. Breil, C. Lavoie et al. Microelectronic Engin., 137, 79 (2015)
- Y.G. Liaw, W.S. Liao et al. Sol. St. Electron., 126, 46 (2016)
- S.J. Rhee, J.C. Lee. Microelectron. Reliab., 45 (7--8), 1051 (2005)
- R.I. Hegde, D.H. Triyoso et al. J. Appl. Phys., 101 (7), 074113 (2007)
- T. Chiarella, L. Witters et al. IEEE ESSCIRC, 84 (2009)
- R. Parihar, V. Narendar et al. IEEE ICDCCom., 1 (2014)
- P.H. Su, Y. Li. IEEE Trans. Semicond. Manufact., 29 (3), 209 (2016)
- T. Horiuchi, H. Mikoshiba et al. IEEE Electron Dev. Lett., 7 (6), 337 (1986)
- K.L. Chen, S. Saller et al. IEEE Trans. Electron Dev., 33 (3), 424 (1986)
- I. Polishchuk, Y.C. Yeo et al. IEEE IRPS, 425 (2001)
- A. Acovic, G. La Rosa et al. Microelectronics Reliab., 36 (7--8), 845 (1996)
- A. Ortiz-Condea, A. Sucre-Gonzaleza et al. Microelectron. Reliab., 69, 1 (2017)
- O.V. Naumova, M.A. Il'nitskivi et al. Semiconductors, 41 (1), 103 (2007)
- A.V. de Oliveira, P.G. Der Agopian et al. Sol. St. Electron., 123, 124 (2016)
- S.S. Rathod, A.K. Saxena et al. J. Appl. Phys., 109 (8), 084504 (2011).
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