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Exciton--polariton transition induced by elastic exciton--exciton collisions in ultra-high quality AlGaAs alloys
Shamirzaev T.S.1, Toropov A.I.1, Bakarov A.K.1, Zhuravlev K.S.1, Kobitski A.Yu.2, Wagner H.P.2, Zahn D.R.T.2
1Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia 
2Institut fur Physik, TU Chemnitz, Chemnitz, Deutschland
2Institut fur Physik, TU Chemnitz, Chemnitz, Deutschland
Поступила в редакцию: 19 сентября 2005 г.
Выставление онлайн: 19 апреля 2006 г.
The stationary and time-resolved polariton radiation in ultra-high quality AlGaAs layers have studied. It has been found that elastic exciton-exciton collisions lead to the appearance of a low-energy line of the polariton radiation. We show that the rate of the exciton-to-polariton transitions caused by elastic exciton-exciton collisions is determined not only by the density of the excitonic gas but also by its temperature which is in accordance to existing theoretical predictions. PACS: 71.35.+z, 71.36.+c, 71.38.+i
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