"Физика и техника полупроводников"
Вышедшие номера
Atmospheric adsorption effects in hot wire chemical vapour deposition microcrystalline silicon films with different electrode configurations
Persheyev S.K.1, Smirnov V.2, O'Neill K.A.1, Reynolds S.2, Rose M.J.1
1Carnegie Laboratory of Physics, Electronic Engineering and Physics Division University of Dundee, Dundee, DD1 4HN, Scotland, UK
2EPICentre, School of Computing and Advanced Technologies, University of Abertay Dundee, Dundee DD1 1HG, Scotland, UK
Поступила в редакцию: 21 июня 2004 г.
Выставление онлайн: 17 февраля 2005 г.

Hot wire CVD thin silicon films were studied by means of dark conductivity, FTIR, hydrogen evolution and SEM surface characterization. Three types of metastability were observed: a) long term irreversible degradation due to oxidization processes on the film surface, b) reversible degradation determined by uncontrolled water/oxygen adsorption, c) fast field switching effect in the film bulk. We propose this effect is associated with morphology changes during film growth and electrical field induced by adsorbed atmospheric components on the film surface. It has been found that metastable processes close to the film surface are stronger than in the bulk.
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