Физика и техника полупроводников
Вышедшие номера
Synchrotron radiation photoemission study of the electronic structure of the ultrathin K/AlN interface
Benemanskaya G.V.1, Timoshnev S.N.2, Iluridze G.N.3, Minashvili T.A.3
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Alferov University, St. Petersburg, Russia
3Georgian Technical University, Tbilisi, Georgia
Email: timoshnev@mail.ru
Поступила в редакцию: 25 февраля 2022 г.
Выставление онлайн: 29 апреля 2022 г.

The electronic structure of the clean AlN surface and the ultrathin K/AlN interface has been studied in situ by synchrotron-based photoelectron spectroscopy using the photon energies in the range of 100-650 eV. The effect of K adsorption was studied. Changes in the valence band and in the Al 2p, N 1s, and K 3p core levels spectra have been investigated using K submonolayer deposition. Modification of the surface electronic structure of the AlN caused by K adsorption is found to originate from the local interaction of N surface atoms and K adatoms. As a results the suppression of intrinsic surface state and appearance of a new induced state are observed. It was found the K-induced electron redistribution effect that causes the positive energy shift of N 1s surface peak and increasing N-ionicity. Keywords: III-nitrides, electronic structure, surface states, metal-III-nitride interfaces, photoelectron spectroscopy.

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