"Физика и техника полупроводников"
Вышедшие номера
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS
Gassoumi M.1
1Research Unit Advanced Materials and Nanotechnologies, University of Kairouan, BP 471, Kasserine, Tunisia
Email: gassoumimalek@yahoo.fr
Поступила в редакцию: 3 мая 2020 г.
Выставление онлайн: 11 июля 2020 г.

In this work, GaN|AlGaN high electron mobility transistor (HEMT) structures are investigated, grown on semi-insulating SiC substrates by molecular beam epitaxy and metal-organic chemical-vapor deposition techniques. This paper reports on the kink effect and hysteresis effect observed in AlGaN|GaN high electron mobility transistors (HEMTs) on SiC substrate. It is well known that trapping effects can limit the output power performance of microwave HEMTs, which is particularly true for the wide band gap devices. A detailed study is presented of FT-DLTS and CDLTS measurements performed on AlGaN|GaN HEMTs. It is demonstrated that the kink effect is directly correlated to shallow traps, and a remarkable correlation exists between deep levels observed by CDLTS and FT-DLTS and the presence of parasitic effects such as kink and hysteresis effects. Keywords: AlGaN|GaN (HEMT), kink effect, hysteresis effect, FT-DLTS, CDLTS, traps.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.