"Физика и техника полупроводников"
Вышедшие номера
Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2/La2O3/HfO2 (HLH) Sandwich Gate Dielectrics
Переводная версия: 10.1134/S1063782620100243
Ramesh L.1, Moparthi S.1, Tiwari P.K.2, Samoju V.R.3, Saramekala G.K.1
1Department of Electronics and Communication Engineering, NIT Calicut, Kozhikode, India
2Department of Electrical Engineering, IIT Patna, Patna, India
3Department of Electronics and Communication Engineering, Gayatri Vidya Parishad College of Engineering, Vishakapatnam, India
Email: gopikrishna@nitc.ac.in
Поступила в редакцию: 11 марта 2020 г.
Выставление онлайн: 11 июля 2020 г.

In this paper, the electrical properties of a double-gate dual-active-layer (DG-DAL) thin-film transistor (TFT) is investigated. To increase the ON-current and pixel intensity, and control the voltage stress bias, the conventional gate oxide material (silicon dioxide SiO2) is replaced with a tri-high-k gate dielectric layer, hafnium dioxide HfO2/lanthanum oxide La2O3/hafnium dioxide HfO2 (HLH). Further, the performance of the proposed DG-DAL structure is compared with the single-active-layer (SAL) and dual-active-layer (DAL) TFTs. The amorphous indium-gallium zinc-oxide (a-IGZO) is considered as active layer for SAL channel region, and on the other hand, a-IGZO and indium-tin-oxide (ITO) are considered as active layers for DAL TFT and DG-DAL TFT channel regions. The parameters such as OFF-current, ON-current, ION/IOFF ratio, threshold voltage, mobility, average subthreshold swing, etc. are evaluated for the considered structures. It is observed that the DG-DAL TFT with HLH dielectric offers high ON-current of 3.85·10-3 A/μm, very low OFF-current of 2.53·10-17 A/μm, very high ION/IOFF ratio of 1.51·1014, the threshold voltage of 0.642 V, high mobility of 35 cm2·v-1·s-1 and average subthreshold swing of 127.84 mV/dec. A commercial TCAD simulation tool ATLAS from SilvacoTM is used to investigate all the parameters for considered structures. Keywords: single active layer (SAL), dual active layer (DAL), double-gate dual active layer (DG-DAL), InGaZnO (IGZO), InSnO (ITO), thin-film transistor (TFT), HfO2/La2O3/HfO2 (HLH).

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Дата начала обработки статистических данных - 27 января 2016 г.