"Физика и техника полупроводников"
Вышедшие номера
Influence of the doping with third group oxides on the properties of zinc oxide thin films
Palimar Sowmya1, Bangera Kasturi V.1, Shivakumar G.K.1
1Thin Film Laboratory, Physics Department, National Institute of Technology Karnataka, Surathka, Karnataka, India
Поступила в редакцию: 22 февраля 2012 г.
Выставление онлайн: 17 февраля 2013 г.

The study of modifications in structural, optical and electrical properties of vacuum evaporated zinc oxide thin films on doping with III group oxides namely aluminum oxide, gallium oxide and indium oxide are reported. It was observed that all the films have transmittance ranging from 85 to 95%. The variation in optical properties with dopants is discussed. On doping the film with III group oxides, the conductivity of the films showed an excellent improvement of the order of 103 Omega-1cm-1. The measurements of activation energy showed that all three oxide doped films have 2 donor levels below the conduction band.
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