"Физика и техника полупроводников"
Вышедшие номера
Effect of Annealing on the Dark and Illuminated I(V) Characterization of a Zno : Ga|Cu2O Hetero-junction Prepared by Ultrasonic Spray System
Полная версия: 10.1134/S1063782620050164
Trir H.1, Radjhi L.2, Sengouga N.1, Tibermacine T.1, Arab L.1, Filali W.3, Abdelkader D.2, Attaf N.4
1Laboratoire des Materiaux Semiconducteurs et Metalliques, Universite Mohammed Khider, Biskra, Algeria
2.Laboratoire des Structures, Proprietes et Interactions Inter Atomiques (LASPI2A), Khenchela University, Algeria
3Centre de Developpement des Technologies Avancees (CDTA), Algiers, Algeria
4Laboratoire couches minces et interfaces, D?partement de Physique, Faculte de Sciences exactes, Universite de Freres Mentouri, Constantine1, Algeria
Email: n.sengouga@univ-biskra.dz
Поступила в редакцию: 2 декабря 2019 г.
Выставление онлайн: 26 марта 2020 г.

This paper presents the Ultrasonic Spray Pyrolysis system fabrication of gallium-doped Zinc Oxide (ZnO : Ga)|Cuprous Oxide (Cu2O) thin film hetero-junction. The deposition parameters were constant for ZnO : Ga and Cu2O. Structural and optical properties of ZnO : Ga, Cu2O and ZnO : Ga|Cu2O hetero-junction were characterized by X-Ray Diffraction method and UV-Vis Spectrometry, respectively. SEM and FTIR were used to reveal the morphology and the nature of the chemical bonds. The electrical properties were measured by an Agilent I-V source meter. The ZnO : Ga|Cu2O hetero-junction was annealed at 350, 400, and 450oC and the current-voltage characteristics were measured. The band gaps of ZnO, Cu2O, and ZnO : Ga|Cu2O are ~3.27 eV, ~2.65 eV, and ~3.29 eV, respectively. The annealing temperature improves the hetero-junction quality. Keywords: ZnO : Ga|Cu2O hetero-junction, ultrasonic spray pyrolysis, electrical properties, annealing.

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