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Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

Chatbouri S.¹, Troudi M.¹, Sghaier N.¹, Kalboussi A.¹, Aimez V.¹, Drouin D.¹, Souifi A.¹

¹Laboratoire de Micro electronique et Instrumentation (LR13ES12), Faculte des Sciences de Monastir, Avenue de l'environnement, Universite de Monastir, Monastir, Tunisia

Email: samir.chatbouri@yahoo.com, Samir.chatbouri@yahoo.com

Поступила в редакцию: 1 июня 2015 г.

Выставление онлайн: 20 августа 2016 г.

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In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO_x=1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I-V curves confirms the creation of a pair electron/hole (e-h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photo-memory effect for 300 s for our nanopixel at room temperature.

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