"Физика и техника полупроводников"
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Properties of nanostructured doped ZnO thin films grown by spray pyrolysis technique
Kumar N. Sadananda1, Bangera Kasturi V.1, Shivakumar G.K.1
1Thin Films Laboratory, Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore, India
Поступила в редакцию: 18 сентября 2013 г.
Выставление онлайн: 20 июля 2014 г.

Aluminium doped zinc oxide thin films are deposited on glass substrate by using spray pyrolysis technique. The X-ray diffraction study of the films revealed that the both the undoped and Al doped ZnO thin films exhibits hexagonal wurtzite structure. The preferred orientation is (002) for undoped and up to 3 at% Al doping, further increase in the doping concentration to 5 at% changes the preferred orientation to (101) direction. The surface morphology of the films studied by scanning electron microscope, reveal marked changes on doping. Optical study indicates that both undoped and Al doped films are transparent in the visible region. The band gap of the films increased from 3.24 to 3.36 eV with increasing Al dopant concentration from 0 to 5 at% respectively. The Al doped films showed an increase in the conductivity by three orders of magnitude with increase in doping concentration. The maximum value of conductivity 106.3 S/cm is achieved for 3 at% Al doped films.
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