"Физика и техника полупроводников"
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Doping in metal chalcogenide glasses
Girlani S.A.1, Yan B.1, Taylor P.C.1
1University of Utah, Salt Lake City, UT, USA
Поступила в редакцию: 16 марта 1998 г.
Выставление онлайн: 20 июля 1998 г.

Chalcogenide glasses that contain sufficient concentrations of metal atoms can be doped p-type. This doping results in part because the local structural order is tetrahedral at both the metal and the chalcogen sites in these glasses. At concentrations exceeding 1019 см-3, oxygen promotes doping by increasing the densities of dangling-bond defects at 3-fold-coordinated chalcogens, which are the doping sites in these glasses. For oxygen concentrations below 1019 см-3, the conductivity is independent of oxygen and, therefore, is controlled by other mechanisms. The compositions Cu6As4S9 and Cu6As4Se9 are studied because at these compositions the S (or Se) and Cu atoms are all tetrahedrally coordinated and there exist only Cu--S and As--S (or Cu--Se and As--Se) bonds.
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