"Физика и техника полупроводников"
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The influence of substrate temperature on the structural and optical properties of ZnS thin films
Ashraf M.1, Akhtar S.M.J.1, Ali Z.1, Qayyum A.2
1Optics Laboratories, P.O. Box, Islamabad, Pakistan
2Physics Division, Pakistan Institute of Nuclear Science and Technology, P.O. Nilore, Islamabad, Pakistan
Поступила в редакцию: 14 сентября 2010 г.
Выставление онлайн: 19 апреля 2011 г.

Thin films of ZnS were deposited on soda lime glass substrates by a modified close-space sublimation technique. The change in optical and structural properties of the films deposited at various substrate temperatures (150-450oC) was investigated. X-ray diffraction spectra showed that films were polycrystalline in nature having cubic structure oriented only along (111) plan. The crystallinity of films increased with the substrate temperature up to 250oC. However, crystallinity decreased with further increase of substrate temperature and films became amorphous at 450oC. The atomic force microscopy data revealed that the films become more uniform and dense with the increase of substrate temperature. Optical properties of the films were determined from the transmittance data using Swanepoel model. It was observed that the energy band gap is increased from 3.52 to 3.65 eV and refractive index of the films are decreased with the increase of substrate temperature. Moreover, considerable improvement in blue response of the films was noticed with increasing substrate temperature.
  • K. Ramanathan, M. Contreras, C.L. Perkin, S. Asher, F.S. Hasoon, J. Keane, D. Young, M. Romero, W. Metzger, R. Noufi, J. Ward, A. Duda. Prog. Photovolt.: Res. Appl., 11, 225 (2003)
  • S. Armstrong, P.K. Datta, R.W. Miles. Thin Sol. Films, 403- 404, 126 (2002)
  • S. Yamaga, A. Yoshokawa, H.J. Kasain. Cryst. Growth, 86, 252 (1998)
  • J. Vidol, O. de Melo, O. Vigil, N. Lopez, G.C. Puent, O.Z. Angle. Thin Sol. Films, 419, 118 (2002)
  • J.A. Ruffner, M.D. Hilmel, V. Mizrahi, G.L. Stegeman, U.J. Gibson. Appl. Opt., 28, 5209 (1989)
  • M.A. Ledger. Appl. Opt., 18, 2979 (1979)
  • X.W.F. Lai, L.L.J. Lv, B. Zhuang, Q. Yan, Z. Huang. Appl. Surf. Sci., 254, 6455 (2008)
  • S. Wang, X. Fu, G. Xia, J. Wang, J. Shao, Z. Fan. Appl. Surf. Sci., 252, 8734 (2006)
  • Q.J. Feng, D.Z. Shen, J.Y. Zhang, H.W. Liang, D.X. Zhao, Y.M. Lu, X.W. Fan. J. Cryst. Growth, 285, 561 (2005)
  • P. Roy, J.R. Jota, S.K. Srivastava. Thin Sol. Films, 515, 1921 (2006)
  • K.H. Hillie, H.C. Swart. Appl. Surf. Sci., 253, 8513 (2007)
  • M. Yokoyama, K.I. Kashiro, S.I. Ohta. J. Cryst. Growth, 81, 73 (1987)
  • Y.P.V. Subbaiah, P. Prathap, K.T.R. Reddy. Appl. Surf. Sci., 253, 4909 (2006)
  • G. Gordillo, E. Romero. Thin Sol. Films, 484, 352 (2005)
  • M. Ashraf, S.M.J. Akhtar, M. Mehmood, A. Qayyum. Eur. Phys. J. Appl. Phys., 48, 10 501 (2009)
  • R. Zhang, B. Wang, L. Wei. Mater. Chem. Phys., 112, 557 (2008)
  • A.E.I. Hichou, M. Addou, J.L. Bubendorff, J. Ebothe, B.E.I. Idrissi, M. Troyon. Semicond. Sci. Technol., 19, 230 (2004)
  • R.J. Swanepoel. Phys. E: Sci. Instrum., 16, 1214 (1983)
  • A.K.S. Aqili, Z. Ali, A. Maqsood. Appl. Surf. Sci., 167, 1 (2000)
  • J. Tauc. Amorphous and Liquid Semiconductors (Plenum, N.Y., 1974) p. 159
  • T.L. Chu, S.S. Chu. Sol. St. Electron., 38, 533 (1995)
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