"Физика и техника полупроводников"
Вышедшие номера
Electrical and optical properties of InN with periodic metallic In insertions
Komissarova T.A.1, Shubina T.V.1, Jmerik V.N.1, Ivanov S.V.1, Ryabova L.I.2, Khokhlov D.R.2, Vasson A.3, Leymarie J.3, Araki T.4, Nanishi Y.4
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2Moscow State University, Moscow, Russia
3LASMEA-UMR CNRS-UBP, AUBIERE Cedex, France
4Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 52, Japan
Поступила в редакцию: 23 апреля 2008 г.
Выставление онлайн: 17 февраля 2009 г.

We report on a growth by molecular beam epitaxy of InN:In semiconductor/metal composite structures containing periodically inserted arrays of In clusters formed by intentional deposition of In metal films in a thickness range of 2-48 monolayers. It was found that indium insertions do not change markedly carrier mobility in the composites, that remains in the 1300-1600 cm2/(V·s) range, while carrier concentration increases with rising In amount. Spectra of thermally detected optical absorption do not exhibit a noticeable Burstein-Moss shift of a principal absorption edge with increasing the carrier concentration, but rather complicated modification of their shapes. PACS: 73.22.-f, 73.50.Dn, 81.05.Ea
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