Вышедшие номера
Defect profiling in semiconductor layers by electrochemical method
Nemcsics Akos1, Makai Janos P.1
1Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, Budapest, Hungary
Поступила в редакцию: 18 сентября 2002 г.
Выставление онлайн: 20 мая 2003 г.

A special selective electrochemical etching based equipment is presented which is appropriate for in-situ observation of the defect structure. The working of the set-up is demonstrated on the InGaAs/GaAs (001) heteroepitaxial systems where the epitaxial layer thickness was above the critical layer thickness. By incremental layer removal, the depth profile on the dislocation density was mapped. The measured defects density is inversely proportional to the layer thickness and corresponds to theoretical model.