The studies of the growth kinetics of GaN layers grown on nitridated Si(111) substrates by plasma-assisted molecular beam epitaxy are presented. The nucleation and overgrowth of the separate GaN/Si(111) nanocolumns during single growth run is demonstrated. The technique of the in-situ control of the GaN Si(111) nanocolumns lateral size is proposed. Acknowledgement The growth experiments were supported financially by the Ministry of Education and Science of the Russian Federation No 6.9789.2017/BCh. The studies of morphological and electrical properties of the samples were supported financially in the framework of the implementation of the "Investigation of the physical principles of plasma-assisted molecular beam epitaxy of wide-bandgap group three nitride semiconductors on lattice-mismatched silicon substrates " project under the Master Research Agreement between Skoltech and SPbAU RAS No 3663-MRA.

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