"Физика и техника полупроводников"
Вышедшие номера
Al-doped and pure ZnO thin films elaborated by sol-gel spin coating process for optoelectronic applications
Maache M.1, Devers T.2, Chala A.3
1Department of Science of matter, Ziane Achour University, Djelfa, Algeria
2ICMN, IUT Chartres, University of Orleans, Chartres, France
3Department of Science of matter, Mohamed Khider University, Biskra, Algeria E-mail:
Email: moumos2001@gmail.com
Выставление онлайн: 19 ноября 2017 г.

Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly. DOI: 10.21883/FTP.2017.12.45182.8078
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