"Физика и техника полупроводников"
Вышедшие номера
Photoluminescence of erbium-doped silicon: excitation power dependence
Ammerlaan C.A.J.1, Thao D.T.X.1, Gregorkiewicz T.1, Sobolev N.A.2
1Van der Waals-Zeeman Institute, University of Amsterdam, Valckenierstraat 65, NL-- XE Amsterdam, The Netherlands
2A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, Russia
Поступила в редакцию: 19 января 1999 г.
Выставление онлайн: 20 мая 1999 г.

The intensity of the photoluminescence of erbium in silicon is analysed by a model which takes into account the formation of free excitons, the binding of excitons to erbium ions, the excitation of inner-shell 4f electrons of erbium ions and their subsequent decay by light emission. Predictions of this model for the dependence of luminescence intensity on laser excitation power are compared with experimental observations. The results for float-zone and Czochralski-grown silicon in which erbium is introduced by implantation with or without oxygen co-implantation are remarkably similar. To obtain agreement between model analysis and experimental data it is necessary to include in the model terms describing energy dissipation by an Auger process of both the erbium-bound excitons and the erbium ions in excited state with free electrons in the conduction band. A good quantitative agreement is achieved.
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