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Improvement in Electrical and 2DEG Properties of Al_0.26Ga_0.74N|GaN|Si HEMTs

Полная версия: 10.1134/S1063782621030076

Jabli F.^1,2, Dhouibi S.^3,4, Gassoumi M.^2,5

¹Laboratory of Micro-Optoelectroniques et Nanostructures, University of Monastir,, Monastir, Tunisia

²Department of Physics, College of Sciences, Qassim University,, Buryadh, Saudi Arabia

³Department of Physics, College of Science and Arts Al-Mithnab, Qassim University, Al-Mithnab, Saudi Arabia

⁴Laboratory of physics of condensed Matter and Nanosciences, University of Monastir, Monastir, Tunisia

⁵Research unit of advanced materials and nanotechnology, University of Kairouan, PO Box 471, Kasserine, Tunisia

Research Unit of Advanced Materials and Nanotechnology, University of Kairouan, Kasserine, Tunisia

Email: malek.gassoumi@univ-lille1.fr

Поступила в редакцию: 9 августа 2020 г.

Выставление онлайн: 12 декабря 2020 г.

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Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO₂|SiN is investigated. Capacitance?voltage at various temperatures (C-V-T), a drain current-voltage at various gate voltages (I_ds-V_ds-V_gs), the gate leakage current with various temperatures (I_gs-V_gs-T), and the maximum extrinsic transconductance Gmax are measured; all of these measurements show the impact of SiO₂|SiN passivation on the performances of AlGaN|GaN|Si HEMTs. Keywords: AlGaN|GaN|Si HEMTs, passivation by SiO₂|SiN, C?V?T, Ids?Vds?Vgs, Igs?Vgs?T, Gmax.

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

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