"Физика и техника полупроводников"
Вышедшие номера
Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs
Полная версия: 10.1134/S1063782621030076
Jabli F.1,2, Dhouibi S.3,4, Gassoumi M.2,5
1Laboratory of Micro-Optoelectroniques et Nanostructures, University of Monastir,, Monastir, Tunisia
2Department of Physics, College of Sciences, Qassim University,, Buryadh, Saudi Arabia
3Department of Physics, College of Science and Arts Al-Mithnab, Qassim University, Al-Mithnab, Saudi Arabia
4Laboratory of physics of condensed Matter and Nanosciences, University of Monastir, Monastir, Tunisia
5Research unit of advanced materials and nanotechnology, University of Kairouan, PO Box 471, Kasserine, Tunisia
Email: malek.gassoumi@univ-lille1.fr
Поступила в редакцию: 9 августа 2020 г.
Выставление онлайн: 12 декабря 2020 г.

Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO2|SiN is investigated. Capacitance?voltage at various temperatures (C-V-T), a drain current-voltage at various gate voltages (Ids-Vds-Vgs), the gate leakage current with various temperatures (Igs-Vgs-T), and the maximum extrinsic transconductance Gmax are measured; all of these measurements show the impact of SiO2|SiN passivation on the performances of AlGaN|GaN|Si HEMTs. Keywords: AlGaN|GaN|Si HEMTs, passivation by SiO2|SiN, C?V?T, Ids?Vds?Vgs, Igs?Vgs?T, Gmax.

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