"Физика и техника полупроводников"
Вышедшие номера
Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models
Полная версия: 10.1134/S1063782620020141
Kumar S.1, Kumar M.Vinay2, Krishnaveni S.1
1Department of Studies in Physics, Manasagangotri, University of Mysore, Mysuru, India
2Department of Physics, K.L.E Society's R.L.S Institute, Belagavi, India
Email: sk@physics.uni-mysore.ac.in
Поступила в редакцию: 15 мая 2019 г.
Выставление онлайн: 20 января 2020 г.

The current transport mechanism of indigenously fabricated Ni/n-GaN Schottky barrier diodes (SBDs) has been analysed using the current--voltage (I-V) and capacitance-voltage (C-V) measurements. Various models like Rhoderick's method, Cheung's method, Norde's method, modified Norde's method, Hernandez's method, and Chattopadhyay's method have been used to extract the different electric parameters from the I-V curve. A comparison has been made between the various electrical parameters such as ideality factor, barrier height, and series resistance, which are extracted from the forward bias I-V curve of Ni/n-GaN SBDs. The carrier concentration of the substrate and the barrier height is obtained from C-V characteristics of Ni/n-GaN SBDs. We observe from the reverse current characteristics that the Ni/n-GaN SBDs show the dominance of Schottky emission in intermediate and higher voltages. Keywords: Schottky contacts, GaN, electrical properties, Rhoderick's method, Cheung's method, Norde's method, Modified Norde's method, Hernandez's method, Chattopadhyay's method, current transport mechanism.

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