"Физика и техника полупроводников"
Издателям
Вышедшие номера
New method of porous Ge layer fabrication: structure and optical properties
Переводная версия: 10.1134/S1063782618050111
Gorokhov E.B.1, Astankova K.N.1, Azarov I.A.1,2, Volodin V.A.1,2, Latyshev A.V.1,2
1Institute of Semiconductor Physics, Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
Email: gorokhov@isp.nsc.ru
Выставление онлайн: 19 апреля 2018 г.

Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge-NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was suppose <Ge-NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers,which was ~70% and ~80%, respectively. Acknowledgement Ellipsometry and Raman measurements were funded by the Russian Foundation for Basic Research (project No 16-07-00975). SEM and IR spectroscopy investigations were carried out with the financial support of the Russian Science Foundation (project No 14-22-00143).

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Дата начала обработки статистических данных - 27 января 2016 г.