"Физика и техника полупроводников"
Издателям
Вышедшие номера
Fabrication of silicon nanostructures for application in photonics
Переводная версия: 10.1134/S1063782618050135
Совет по грантам Президента РФ, МК-228.2017.2
RFBR , 17-02-01116 A
Ministry of education and science of Russian Federation, 3.4903.2017/6.7
Government of Russia, 074-U01
RFBR , 16-02-00932 A
Kamalieva A.N.1, Toropov N.A.1, Vartanyan T.A. 1, Baranov M.A.1, Parfenov P.S.1, Bogdanov K.V.1, Zharova Y.A.1,2, Tolmachev V.A.2
1ITMO University, Saint Petersburg, Russia
2Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
Email: Tigran.Vartanyan@mail.ru
Выставление онлайн: 19 апреля 2018 г.

Silicon is the primary material of modern electronics. It also possesses bright potentials for applications in nanophotonics. At the same time optical properties of bulk silicon do not fully satisfy requirements imposed on them. Fortunately, properties of silicon nanostructures strongly depend on their shapes and sizes. In this regard, of special interest is the development of fabrication and post-processing methods of silicon nanostructures. In this contribution we propose a method for silicon nanostructures fabrication combining the technique of high-vacuum deposition with metal-assisted chemical etching. SEM images as well as ellipsometry, Raman scattering and optical spectroscopy data prove that the desired structural changes were obtained. Acknowledgement Authors thank the next foundations for financial support: the RFBR (16-02-00932 A, and 17-02-01116 A), the Government of Russia (074-U01), Presidential Grant (MK-228.2017.2), and Ministry of education and science of Russian Federation (3.4903.2017/6.7).

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Дата начала обработки статистических данных - 27 января 2016 г.