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Lifetime of excitons localized in Si nanocrystals in amorphous silicon

Gusev O.B.¹, Belolipetskiy A.V.¹, Yassievich I.N.¹, Kukin A.V.², Terukova E.E.², Terukov E.I.²

¹Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia Ioffe Institute, St. Petersburg, Russia

²R&D Center of thin-film technology for energetics under Ioffe Physicotechnical Institute, St. Petersburg, Russia

Email: alexey.belolipetskiy@mail.ioffe.ru

Поступила в редакцию: 1 октября 2015 г.

Выставление онлайн: 19 апреля 2016 г.

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The introduction of nanocrystals plays an important role in improving the stability of the amorphous silicon films and increasing the carrier mobility. Here we report results of the study on the photoluminescence and its dynamics in the films of amorphous hydrogenated silicon containing less than 10% of silicon nanocrystals. The comparing of the obtained experimental results with the calculated probability of the resonant tunneling of the excitons localized in silicon nanocrystals is presented. Thus, it has been estimated that the short lifetime of excitons localized in Si nanocrystal is controlled by the resonant tunneling to the nearest tail state of the amorphous matrix.

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