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Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors

Tsai Jung-Hui¹, Lee Ching-Sung², Chiang Chung-Cheng¹, Chao Yi-Ting¹

¹Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, TAIWAN
²Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan

Поступила в редакцию: 11 сентября 2013 г.

Выставление онлайн: 20 мая 2014 г.

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In this article, the characteristics of InP/InGaAs heterostructure-emitter bipolar transistors with 30 Angstrem, 50 Angstrem n-InP layer tunneling layers and a five-period InP/InGaAs superlattice are demonstrated and comparatively investigated by experimentally results and analysis. In the three devices, a 200 Angstrem n-In_0.53Ga_0.47As layer together with an n-InP tunneling emitter layer (or n-InP/n-InGaAs superlattice) forms heterostructure emitter to decrease collector-emitter offset voltage. The results exhibits that the largest collector current and current gain are obtained for the tunneling transistor with a 30 Angstrem n-InP tunneling emitter layer. On the other hand, some of holes injecting from base to emitter will be blocked at n-InP/n-InGaAs heterojunction due to the relatively small hole transmission coefficient in superlattice device, which will result in a considerable base recombination current in the n-InGaAs layer. Therefore, the collector current and current gain of the superlattice device are the smallest values among of the devices.

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