Effect of post oxidation annealing on electrical characteristics of Ni/SiO2/4H-SiC capacitor with varying oxide thickness
Gupta Sanjeev K.1, Azam A.2, Akhtar J.1
1Sensors and Nano-Technology Group, Semiconductor Devices Area Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani-333 031, India
2Center of Excellence in Materials science (Nanomaterials), Department of Applied Physics, Z.H. College of Engineering and Technology, Aligarh Muslim University, Aligar, India
Поступила в редакцию: 15 февраля 2011 г.
Выставление онлайн: 20 марта 2012 г.
This paper describes an experimental observation of post oxidation annealing (POA) treatment on current-voltage and capacitance-voltage characteristics of Ni/SiO2/4H-SiC system with varying oxide thickness. The leakage current of fabricated structures shows an asymmetric behavior having noticeable effect of POA with the polarity of gate bias (+V or -V at the anode). When compared with the conventional wet oxidation, the POA processes greatly reduce interface-state density and enhance reliability of devices. An extensive increment in the barrier height at SiO2/4H-SiC interface was observed due to POA, which resulted into lower forward leakage current. A significant improvement in the oxide charges are also demonstrated using C-V characteristics of POA treated structures.
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