Физика и техника полупроводников

Авторам

Правила оформления публикаций

Вышедшие номера

2024
- 1 2 3 4 5 6 7 8 9
2023
- 1 2 3 4 5 6 7 8 9
2022
- 1 2 3 4 5 6 7 8 9 10 11 12
2021
- 1 2 3 4 5 6 7 8 9 10 11 12
2020
- 1 2 3 4 5 6 7 8 9 10 11 12
2019
- 1 2 3 4 5 6 7 8 9 10 11 12
2018
- 1 2 3 4 5 6 7 8 9 10 11 12 13
2017
- 1 2 3 4 5 6 7 8 9 10 11 12
2016
- 1 2 3 4 5 6 7 8 9 10 11 12
2015
- 1 2 3 4 5 6 7 8 9 10 11 12
2014
- 1 2 3 4 5 6 7 8 9 10 11 12
2013
- 1 2 3 4 5 6 7 8 9 10 11 12
2012
- 1 2 3 4 5 6 7 8 9 10 11 12
2011
- 1 2 3 4 5 6 7 8 9 10 11 12
2010
- 1 2 3 4 5 6 7 8 9 10 11 12
2009
- 1 2 3 4 5 6 7 8 9 10 11 12
2008
- 1 2 3 4 5 6 7 8 9 10 11 12
2007
- 1 2 3 4 5 6 7 8 9 10 11 12
2006
- 1 2 3 4 5 6 7 8 9 10 11 12
2005
- 1 2 3 4 5 6 7 8 9 10 11 12
2004
- 1 2 3 4 5 6 7 8 9 10 11 12
2003
- 1 2 3 4 5 6 7 8 9 10 11 12
2002
- 1 2 3 4 5 6 7 8 9 10 11 12
2001
- 1 2 3 4 5 6 7 8 9 10 11 12
2000
- 1 2 3 4 5 6 7 8 9 10 11 12
1999
- 1 2 3 4 5 6 7 8 9 10 11 12
1998
- 1 2 3 4 5 6 7 8 9 10 11 12
1997
- 1 2 3 4 5 6 7 8 9 10 11 12
1996
- 1 2 3 4 5 6 7 8 9 10 11 12
1995
- 1 2 3 4 5 6 7 8 9 10 11 12
1994
- 1 2 3 4 5 6 7 8 9 10 11 12
1993
- 1 2 3 4 5 6 7 8 9 10 11 12
1992
- 1 2 3 4 5 6 7 8 9 10 11 12
1991
- 1 2 3 4 5 6 7 8 9 10 11 12
1990
- 1 2 3 4 5 6 7 8 9 10 11 12
1989
- 1 2 3 4 5 6 7 8 9 10 11 12
1988
- 1 2 3 4 5 6 7 8 9 10 11 12

Effect of post oxidation annealing on electrical characteristics of Ni/SiO₂/4H-SiC capacitor with varying oxide thickness

Gupta Sanjeev K.¹, Azam A.², Akhtar J.¹

¹Sensors and Nano-Technology Group, Semiconductor Devices Area Central Electronics Engineering Research Institute (CEERI)/Council of Scientific and Industrial Research (CSIR), Pilani-333 031, India
²Center of Excellence in Materials science (Nanomaterials), Department of Applied Physics, Z.H. College of Engineering and Technology, Aligarh Muslim University, Aligar, India

Поступила в редакцию: 15 февраля 2011 г.

Выставление онлайн: 20 марта 2012 г.

PDF версия

Абстракт
Литература
Статистика просмотров

This paper describes an experimental observation of post oxidation annealing (POA) treatment on current-voltage and capacitance-voltage characteristics of Ni/SiO₂/4H-SiC system with varying oxide thickness. The leakage current of fabricated structures shows an asymmetric behavior having noticeable effect of POA with the polarity of gate bias (+V or -V at the anode). When compared with the conventional wet oxidation, the POA processes greatly reduce interface-state density and enhance reliability of devices. An extensive increment in the barrier height at SiO₂/4H-SiC interface was observed due to POA, which resulted into lower forward leakage current. A significant improvement in the oxide charges are also demonstrated using C-V characteristics of POA treated structures.

J.A. Cooper, A. Agarwal. Proc. IEEE, 90, 956 (2002)
V.V. Afanas'ev, A. Stesmans, F. Ciobanu, G. Pensl, K.Y. Cheong, S. Dimitrijev. Appl. Phys. Lett., 82, 568 (2003)
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, M.Di Ventra, S.T. Pantelides, L.C. Feldman, R.A. Weller. Appl. Phys. Lett., 76, 1713 (2000)
V.V. Afanas'ev, A. Stesmans, M. Bassler, G. Pensl, M.J. Schulz. Appl. Phys. Lett., 76, 336 (2000)
T.E. Rudenko, I.N. Osiyuk, I.P. Tyagulski, H.O. Olafsson, E.O. Sveinbjornsson, Sol. St. Electron., 49, 545 (2005)
S. Dimitrijev, P. Tanner, and H.B. Harrison. Microelectron. Reliab., 39, 441 (1999)
G.Y. Chung, C.C. Tin, J.R. Williams, K. McDonald, R.K. Chanana, R.A. Weller, S.T. Pantelides, L.C. Feldman, O.W. Holland, M.K. Das, J.W. Palmour. IEEE Electron. Dev. Lett., 22, 176 (2001)
J.M. Knaup, P. Deak, Th. Frauenheim, A. Gali, Z. Hajnal, W.J. Choyke. Phys. Rev. B, 72, 115 323 (2005)
J.G. Huang, R.J. Jaccodine, Donald R. Young. J. Appl. Phys., 75, 2564 (1994)
R. Swope, W.S. Yoo, J. Hsieh, S. Shuchmann, F. Nagy, H. Nijenhuis, D. Mordo. J. Electrochem. Soc., 144, 2559 (1997)
S. Hasegawa, A. Saito, J.A. Lubguban, T. Inokuma, Y. Kurata. Jpn. J. Appl. Phys., 37 4904 (1998)
Y. Saito, U. Mori. Jpn. J. Appl. Phys., 37 L1172 (1998)
K.Y. Cheong, W. Bahng, N.-K. Kim. Microelectron. Eng., 83, 65 (2006)
F. Keiko, T. Yoichiro, I. Masayuki, O. Ken-ichi, T. Tetsuya, S. Tatsuya, K. Kazumasa, T. Jyunji, O. Tatsuo. Sol. St. Electron., 49, 896 (2005)
H-F. Li, S. Dimitrijev, D. Sweatman, H.B. Harrison. J. Electron. Mater., 29, 1027 (2000)
J. Campi, Y. Shi, Y. Luo, F. Yan, J.H. Zhao. IEEE Trans. Electron. Dev., 46, 511 (1999)
F. Allerstam, H.O. Olafsson, G. Gudjonsson, D. Dochev, E.O. Sveinbjornsson, T. Rodle, R. Jos, J. Appl. Phys., 101, 124 502 (2007)
Yu.Yu. Bacherikov, R.V. Konakova, A.N. Kocherov, P.M. Lytvyn, O.S. Lytvyn, O.B. Okhrimenko, A.M. Svetlichnyi. Techn. Phys., 48, 598 (2003)
K. Ramesh, A.N. Chandorkar, J. Vasi. J. Appl. Phys., 65, 3958 (1989)
S.K. Lai, D.W. Dong, A. Hartstein. J. Electrochem. Soc., 129, 2042 (1982)
S.T. Chang, N.M. Johnson, S.A. Lyon. Appl. Phys. Lett., 44 316 (1984)
P.J. Wright, K.C. Saraswat. IEEE Trans. Electron. Dev., 36, 879 (1989)
Sanjeev K. Gupta, A. Azam, J. Akhtar. Pramana--J. Phys., 74, 325 (2010)
Sanjeev K. Gupta, A. Azam, J. Akhtar. Microelectron. Int., 27, 106 (2010)
R.K. Chanana, K. McDonald, M.D. Ventra, S.T. Pantelides, L.C. Fedman, G.Y. Chung, C.C. Tin, J.R. Williams, R.A. Waller. Appl. Phys. Lett., 77, 2560 (2000)
V.V. Afanas'ev, M. Bassler, G. Pensl, M.J. Schultz, E.S. Kamienski. J. Appl. Phys., 79 3108 (1996)
E. Pippel, J. Woltersdorf, H.O. Olafsson, E.O. Sveinbjornsson. J. Appl. Phys., 97 034 302 (2005)
D.K. Schroder. Semiconductor material and device characterization (John Wiley \& Sons, Inc., Hoboken, N.J., 2006)

Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.

Дата начала обработки статистических данных - 27 января 2016 г.

Учредители

Издатель