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Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of n-type
Emtsev V.V.1, Ivanov A.M.1, Kozlovski V.V.2, Lebedev A.A.1, Oganesyan G.A.1, Strokan N.B.1, Wagner G.3
1Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, Russia
2St. Petersburg State Polytechnic University, St. Petersburg, Russia
3Leibniz Institute for Crystal Growth, Berlin, Germany
Поступила в редакцию: 22 октября 2011 г.
Выставление онлайн: 20 марта 2012 г.
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Effects of irradiation with 0.9 MeV electrons as well as 8 and 15 MeV protons on moderately doped n-Si grown by the floating zone (FZ) technique and n-SiC (4H) grown by chemical vapor deposition are studied in a comparative way. It has been established that the dominant radiation-produced defects with involvement of V group impurities differ dramatically in electron- and proton-irradiated n-Si (FZ), in spite of the opinion on their similarity widespread in literature. This dissimilarity in defect structures is attributed to a marked difference in distributions of primary radiation defects for the both kinds of irradiation. In contrast, DLTS spectra taken on electron- and proton-irradiated n-SiC (4H) appear to be similar. However, there are very much pronounced differences in the formation rates of radiation-produced defects. Despite a larger production rate of Frenkel pairs in SiC as compared to that in Si, the removal rates of charge carriers in n-SiC (4H) were found to be considerably smaller than those in n-Si (FZ) for the both electron and proton irradiation. Comparison between defect production rates in the both materials under electron and proton irradiation is drawn.
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