Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets
Chu Kuei-Yi1, Chiang Meng-Hsueh2, Cheng Shiou-Ying2, Liu Wen-Chau1
1Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan, TAIWAN, Republic of China
2Department of Electronic Engineering, National II an University, I-Lan, TAIWAN, Republic of China
Поступила в редакцию: 21 марта 2011 г.
Выставление онлайн: 20 января 2012 г.
Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple delta-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple delta-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple delta-doped counterpart. The DCPHEMT with graded triple delta-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.
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