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Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

Kozyukhin S.¹, Golovchak R.², Kovalskiy A.³, Shpotyuk O.², Jain H.³

¹Institute of General and Inorganic Chemistry, Russian Academy of Science, Moscow, Russia
²Lviv Scientific Research Institute of Materials of SRC "Carat", U Lviv, Ukraine
³Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, USA

Поступила в редакцию: 14 сентября 2010 г.

Выставление онлайн: 19 марта 2011 г.

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High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As_xSe_100-x, As_xS_100-x, Ge_xSe_100-x and Ge_xS_100-x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

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