"Физика и техника полупроводников"
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InGaP/InGaAs Doped-Channel Direct-Coupled Field-Effect Transistors Logic with Low Supply Voltage
Tsai Jung-Hui1, Lour Wen-Shiung2, Weng Tzu-Yen3, Li Chien-Ming3
1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, TAIWAN
2Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan
3Department of Physics, National Kaohsiung Normal University, Kaohsiung 802, Taiwan
Поступила в редакцию: 2 июня 2009 г.
Выставление онлайн: 20 января 2010 г.

InGaP/InGaAs doped-channel direct-coupled field-effect transistor logic (DCFL) with relatively low supple voltage is demonstrated by two-dimensional analysis. In the integrated enhancement/depletion-mode transistors, subband and two-dimensional electron gas (2DEG) are formed in the InGaAs strain channels, which substantially increase the channel concentration and decrease the drain-to-source saturation voltage. The integrated devices show high turn-on voltage, high transconductance, broad gate voltage swing, and excellent high frequency performance, simultaneously. Furthermore, the integrated devices exhibit large noise margins for DCFL application with low supply voltage of 1.5 V attributed from the relatively small saturation voltages of the studied integrated devices.
  1. L.W. Yin, Y. Hwang, J.H. Lee, R.M. Kolbas, R.J. Trew, U.K. Mishra. IEEE Electron. Dev. Lett., 11, 561 (1990)
  2. J.C. Liou, K.M. Lau. IEEE Trans. Electron. Dev., 35, 14 (2002)
  3. K.H. Yu, H.M. Chuang, K.W. Lin, C.C. Cheng, J.Y. Chen, W.C. Liu. IEEE Trans. Electron. Dev., 49, 1687 (2002)
  4. H.M. Chuang, S.Y. Cheng, X.D. Liao, C.Y. Chen, W.C. Liu. Electron. Lett., 39, 1016 (2003)
  5. H. Ahn, M. El Nokali. IEEE Trans. Electron. Dev., 41, 874 (1994)
  6. M. Suzuki, S. Notomi, M. Ono, N. Kobayashi, E. Mitani, K. Odani, T. Mimura, M. Abe. IEEE J. Sol. St. Circuits, 26, 1571 (1991)
  7. A. Mahajan, P. Fay, M. Arafa, I. Adesida. IEEE Trans. Electron Dev., 45, 338 (1998)
  8. M.K. Tsai, S.W. Tan, Y.W. Wu, W.S. Lour, Y.J. Yang. Semicond. Sci. Technol., 17, 156 (2002)
  9. K.H. Su, W.C. Hsu, C.S. Lee, T.Y. Wu, Y.H. Wu, L. Chang, R.S. Hsiao, J.F. Chen, T.W. Chi. IEEE Electron. Dev. Lett., 153, 96 (2007)
  10. SILVACO 2000 Atalas User's Manual Editor I (SILVACO Int. Santa Clara, CA, USA)
  11. L.W. Laih, W.S. Lour, J.H. Tsai, W.C. Liu, C.Z. Wu, K.B. Thei, R.C. Liu. Sol. St. Electron., 39, 15 (1995)
  12. M.J. Kao, H.M. Shieh, W.C. Hsu, T.Y. Lin, Y.H. Wu, R.T. Hsu. IEEE Trans. Electron. Dev., 43, 1181 (1996).

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