High-performance InGaP/GaAs pnp delta-doped heterojunction bipolar transistor
Tsai Jung-Hui1, Chiu Shao-Yen2, Lour Wen-Shiung2, Guo Der-Feng3
1Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, TAIWAN
2Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan
3Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
Поступила в редакцию: 15 октября 2008 г.
Выставление онлайн: 19 июня 2009 г.
In this article, a novel InGaP/GaAs pnp delta-doped heterojunction bipolar transistor is first demonstrated. Though the valence band discontinuity at InGaP/GaAs heterojunction is relatively large, the addition of a delta-doped sheet between two spacer layers at the emitter-base (E-B) junction effectively eliminates the potential spike and increases the confined barrier for electrons, simultaneously. Experimentally, a high current gain of 25 and a relatively low E-B offset voltage of 60 mV are achieved. The offset voltage is much smaller than the conventional InGaP/GaAs pnp HBT. The proposed device could be used for linear amplifiers and low-power complementary integrated circuit applications. PACS: 85.30.Pq, 73.40.Kp
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