"Физика и техника полупроводников"
Вышедшие номера
Spectroscopic parameters of LVM absorption bands of carbon and oxygen impurities in isotopic enriched silicon 28Si, 29Si and 30Si
Sennikov P.G.1, Kotereva T.V.1, Kurganov A.G.1, Andreev B.A.1, Niemann H.1, Schiel D.1, Emtsev V.V.1, Pohl H.-J.1
1Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhny Novgorod, Russia
Поступила в редакцию: 4 августа 2004 г.
Выставление онлайн: 17 февраля 2005 г.

The IR spectra of all three Si isotopes in the form of bulk single crystals (28Si with enrichment more as 99.9%, 29Si and 30Si with enrichment more than 90%) has been studied at T=300, 17 and 5 K in spectral range 550-1200 cm-1. IR active local vibrational modes (LVM) of the Si-12C centered at 605 cm-1 and of Si-16O-Si quasi-molecules in region of 1136 cm-1 for all Si isotopes in comparison with Si of natural isotopic composition as well as its isotopic shift at 300 and 17 K have been determined. The dependence of shape of antisymmetric stretching vibration band of 28Si-16O-28Si in spectrum of 28Si on spectral resolution has been studied. The perspectives of generalization of IR spectroscopy method for determination of carbon and oxygen impurities in Si of natural isotopic composition to mono-isotopic Si have been discussed.
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