Вышедшие номера
Structural, optical, and electronic studies of Ni doped ZnO thin films
Gupta Prateek1, Joshi Bhubesh C.1
1Department of Physics and Material Science and Engineering, Jaypee Institute of Information Technology, Noida, India
Email: bhubesh.joshi@jiit.ac.in
Выставление онлайн: 31 марта 2023 г.

The structural, optical, and electronic properties of Ni-doped ZnO (NZO) thin films were studied by X-ray diffraction (XRD), ultraviolet-visible transmittance spectroscopy (UV-Vis), atomic force microscopy (AFM), and Fourier transform infrared spectroscopy (FTIR). 0, 3, 5, and 7% NZO thin films were deposited on quartz substrate by pulsed laser deposition (PLD) technique at a substrate temperature of 300oC and oxygen partial pressure of 1 mTorr. XRD results show that all deposited films were crystalline and oriented along the (002) plane with wurtzite symmetry. All deposited films also show high transmittance in the UV-Visible regime (300-800 nm). Tauc formulation was used to calculate the bandgap. NZO thins films show a lesser bandgap as compared to pure ZnO films and further with Ni concentration the bandgap was reduced from 3.20 eV (3%) to 3.11 eV (7%). AFM results revealed the uniform deposition of NZO and ZnO films over a quartz substrate and FTIR analysis shows the shifting of the Zn-O-Zn band towards higher frequency numbers with Ni concentrations. Results obtained from this study indicate that as PLD grew NZO thin films can be a promising candidate for optoelectronic application. Keywords: ZnO, PLD, XRD, Ni, UV, NZO.

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