Copper zinc tin sulphide (CZTS) thin films have been deposited on glass substrate at 323±5 K using sequential ionic layer adsorption reaction (SILAR). The number of SILAR cycles required for optimum crystalline quality CZTS thin films was optimized. The as-deposited CZTS thin films showed kesterite crystalline structure with preferential orientation along (103) plane. Structural, optical, electrical, and morphological properties of the films changed when the as-prepared films were subjected to annealing in a vacuum chamber maintained at 3·10^-4 Torr at temperatures of 473, 573, and 673 K. Film resistivity was found to decrease exponentially as the annealing temperature was increased. We have achieved a resistivity of 4.4·10^-4 Omega·m for the as-prepared thin film, which is lowest among SILAR-grown films at temperature lower than 373 K without any post-deposition processing. A superstrate-type p-n junction was fabricated by growing nano-structured zinc oxide (ZnO) on top of the glass|CZTS structure using chemical spray pyrolysis technique. The photosensitivity of the p-n junction was reversed when the structure was subjected to vacuum annealing at 673 K. Keywords: SILAR, CZTS, vacuum annealing, photo-sensitivity.

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Дата начала обработки статистических данных - 27 января 2016 г.