Electrical measurements on heavily doped n-type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n-> p conversion of conductivity type are the same as those previously observed in lightly and moderately doped materials, thus extending the range of doping from ~10¹⁴ to ~10¹⁶ cm^-3. It is clear now that the presently adopted model of the dominant impurity-related defects as simple vacancy-impurity pairs in irradiated n-Ge, in analogy to such defects reliably identified in irradiated n-Si, appears to be inconsistent with the experimental information collected so far. As a consequence, the impurity diffusion simulations in heavily doped Ge based on this model need to be reconsidered. The requirements to be met while modeling impurity-related defects in irradiated n-Ge in accordance with the reliable experimental data are established. Keywords: germanium, irradiation, impurity-related defects.

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