Вышедшие номера
Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory
Полная версия: 10.1134/S106378262011007X
Emtsev V.V.1, Oganesyan G.A.1
1Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
Email: emtsev@mail.ioffe.ru
Поступила в редакцию: 28 июня 2020 г.
Выставление онлайн: 7 августа 2020 г.

Electrical measurements on heavily doped n-type germanium subjected to gamma-irradiation show that the features of impurity-related defect formation before n-> p conversion of conductivity type are the same as those previously observed in lightly and moderately doped materials, thus extending the range of doping from ~1014 to ~1016 cm-3. It is clear now that the presently adopted model of the dominant impurity-related defects as simple vacancy-impurity pairs in irradiated n-Ge, in analogy to such defects reliably identified in irradiated n-Si, appears to be inconsistent with the experimental information collected so far. As a consequence, the impurity diffusion simulations in heavily doped Ge based on this model need to be reconsidered. The requirements to be met while modeling impurity-related defects in irradiated n-Ge in accordance with the reliable experimental data are established. Keywords: germanium, irradiation, impurity-related defects.

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