"Физика и техника полупроводников"
Вышедшие номера
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films
Полная версия: 10.1134/S1063782619160036
Asalzadeh S.1, Yasserian K.1
1Department of Physics, Islamic Azad University, Karaj Branch, Iran
Email: sasalzad@hawk.iit.edu
Поступила в редакцию: 9 мая 2019 г.
Выставление онлайн: 19 ноября 2019 г.

This paper investigates the effect of various postannealing cooling rates on structural and electrical properties of Titanium Dioxide (TiO2) thin films. TiO2 thin films were deposited on a silicon substrate using DC magnetron sputtering technique. After annealing TiO2 thin films at 600oC, to investigate the effect of different cooling rates on TiO2 thin films, samples were cooled down from 600oC to room temperature under 3 different rates: 2oC/min, 6oC/min, and 8oC/min. The Surface morphology, crystal structure, and electrical properties of the samples were characterized by atomic force microscope (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) techniques. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of TiO2. The sample with 2oC/min cooling rate has the largest grain size and highest electrical resistivity, while the sample with 8oC/min cooling rate has the smallest grain size and lowest electrical resistivity. Keywords: TiO2, Annealing, Electrical properties, Thin Film, Cooling Rate.

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