This paper investigates the effect of various postannealing cooling rates on structural and electrical properties of Titanium Dioxide (TiO₂) thin films. TiO₂ thin films were deposited on a silicon substrate using DC magnetron sputtering technique. After annealing TiO₂ thin films at 600^oC, to investigate the effect of different cooling rates on TiO₂ thin films, samples were cooled down from 600^oC to room temperature under 3 different rates: 2^oC/min, 6^oC/min, and 8^oC/min. The Surface morphology, crystal structure, and electrical properties of the samples were characterized by atomic force microscope (AFM), X-ray diffraction (XRD) and Four-point probe (FPP) techniques. It is found that the rate of decreasing temperature after annealing can affect the morphology structure and electrical resistivity of TiO₂. The sample with 2^oC/min cooling rate has the largest grain size and highest electrical resistivity, while the sample with 8^oC/min cooling rate has the smallest grain size and lowest electrical resistivity. Keywords: TiO₂, Annealing, Electrical properties, Thin Film, Cooling Rate.

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