"Физика и техника полупроводников"
Вышедшие номера
Electrical Characterization of Hybrid Halide Perovskites Based Heteroj unction Device *
Переводная версия: 10.1134/S1063782619040067
Chaudhary Jyoti1, Choudhary Shaily1, Mohan Singh Negi Chandra2, Gupta Saral K.1, Singh Verma Ajay1
1Department of Physics, Banasthali Vidyapith, Banasthali, India
2Department of Electronics, Banasthali Vidyapith, Banasthali, India
Email: aiav phv@rediffmail.com
Поступила в редакцию: 17 октября 2018 г.
Выставление онлайн: 20 марта 2019 г.

Herein, we have measured the mobility of Hole's for the configuration FT0/TiO2/CH3NH3PbBr3/PCBM/Al by the SCLC regime. The current-voltage (I-V) characteristics of the CH3NH3PbBr3 perovskite based device shows the rectifying behavior as Schottky diode. Different parameters of the proposed device such as saturation current, ideality factor, barrier height have been taken out from I-V characteristics. The highest Hole's mobility from Ti02 thin film through the perovskite and PEDOT:PSS film to the top aluminum electrode has of order 1.59·10-4 cm2V-1s-1. Moreover, the proposed device shows the TFSCLC regime at lower voltage while, at higher voltages it shows the TCLC regime. In addition to this, some important parameters like junction resistance, capacitance and carrier lifetime of device can be measured by the spectroscopy analysis of impedance.

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Дата начала обработки статистических данных - 27 января 2016 г.