A straightforward method for thin metal films production and bringing them at the percolation threshold has been developed. The method is based on the controlled thermal annealing of initially conductive metal films. Electrical conductivity studies of thin silver, gold, and copper films at the percolation threshold revealed the existence of high-resistance states (10¹² Omega) and low-resistance states (10³ Omega) of the films. The switching between these states under bias is reversible. The characteristic switching times are 200 ns, 2 mus, and 60 mus for silver, gold, and copper films, correspondently. Acknowledgements We are grateful to V.A. Polishchuk and to P.S. Parfenov for SEM and AFM study of samples. This study was supported by the Russian Foundation for Basic Research (project nos. 16-32-60028 mol_dk and 16-32-00165 mol_a) and by the Government of Russian Federation (Grant 074-U01). TAV work was done in the framework of the state assignment of the Ministry of education and science of Russian Federation #3.4903.2017/6.7.

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