"Физика и техника полупроводников"
Издателям
Вышедшие номера
Thermal smoothing and roughening of GaAs surfaces: experiment and Monte Carlo simulation
Переводная версия: 10.1134/S1063782618050147
Kazantsev D.M. 1,2, Akhundov I.O. 1,2, Alperovich V.L. 1,2, Shwartz N.L.1,3, Kozhukhov A.S.1, Latyshev A.V.1,2
1A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
2Novosibirsk State University, Novosibirsk, Russia
3Novosibirsk State Technical University, Novosibirsk, Russia
Email: kazantsev.83@ya.ru, akhundov@ngs.ru, alper@isp.nsc.ru
Выставление онлайн: 19 апреля 2018 г.

GaAs thermal smoothing at temperatures T≤650oC in the conditions close to equilibrium yields surfaces with atomically smooth terraces separated by steps of monatomic height. At higher temperatures surface smoothing is changed to roughening. Possible reasons of surface roughening at elevated temperatures are studied by means of Monte Carlo simulation and compared with the experimental results on GaAs. It is proved that GaAs roughening at elevated temperatures is caused by kinetic instabilities due to deviations from equilibrium towards growth or sublimation. The microscopic mechanisms of kinetic-driven roughening are discussed. Acknowledgements The AFM measurements and Monte-Carlo simulations were supported by RSF (Grant No 14-22-00143).

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